A14 NanoFlexTM Pro platform technology features the world’s smallest SRAM with a cell size <0.017μm2 and highest SRAM macro density to date through dimensional ground rule scaling. Coupled with standard cell innovations, it delivers a full-node PPA improvement over the predecessor N2 technology for a 10~15% speed enhancement, a 25~30% power reduction and a chip density increase by ~20% driven by logic and SRAM scaling. Key features, such as TSV, innovative RDL that enables SoIC bond pitch of 4.5μm and high-performance MiM processes, have also been developed to accelerate the system-level integration and scaling for SoIC products. Supported by robust yield and device progress, A14 technology is on track for volume production in 2028.
In simpler terms, the SRAM density improved by 2.9% (according to ChatGPT). Which is better than it sounds, because SRAM had reached a wall, in terms of density gains, and, chips can be dominated by SRAM in terms of surface area, so this can mean a lot more room for logic, even though that is also getting considerably denser.
Or AMD’s putting sram on a separate chip. I’m surprised they didn’t go there yet except for extra L3 instead of all of it. At some point the costs will shift the decisions.
No one seem to notice that TSMC has kept its timelines inspite if incredibly advance manufacuring,robotics,materials engineering,semi conductor engineering..and many more requirememts.
It's hard to tell because AI has pushed up costs. IE. Chip fab margins are increasing.
But generally, I think it's even or increasing $/transistor for each node. I'd guess that A14 would have been 20% more expensive than N2 regardless or AI or not.
It probably is still worth it because you're also getting 20-30% better power efficiency - which is a big deal for data center chips.
If we exclude short-term shortages then no. The cost to make a wafer hasn't really changed. Larger wafers improved costs but that's about it AFAIK.
Feature sizes have been shrinking unevenly for two decades now combined with the overall slowdown in improvements. Transistors themselves are FinFET geometry and something like 15-30 atoms thick and maybe 80-100 across. There ain't much juice left to squeeze in terms of size but perhaps we'll figure out how to reduce leakage (heat).
Physics hates the very large and the very small. The large get the tyranny of volume scaling + general relativity. The small have their entire concept of reality smashed by quantum mechanics.
A lot of that is the lack of SRAM scaling. There’s still quite a bit of improvements in the back end (metal traces). That aside, if foundries adopted say a 1T-1C SRAM we’d see a pretty rapid density doubling
Is 1T1C SRAM a technological thing or does it mean "persuade designers to use DRAM in the many cases where the retention contract could be timeboxed with a bit of extra thought and cross-team haggling"?
MRAM is 1T, non-volatile and supposedly has nanosecond-scale write times so it naively seems like it'd be an ideal SRAM replacement. But I guess shrinking MTJ is more difficult than other components or there are some other limitations.
Aka eDRAM? It was a thing back on 14nm node, but AFAIR not so much anymore. The 1C part is hard to get right in a way that is compatible with a logic process.
20% growth then 20% again still seems pretty good to me though. I guess compounded that is a 44% increase N3 to A14 which also starts to look much better if you zoom out a bit. I mean 44% more density since a few years ago seems, if not massive, not insignificant, like you will definitely notice it.
Yes but considering N10 was fabricated with DUV lithography right before the shift to EUV I'm not sure how fair that comparison is. That being said the density scaling of N10 nodes compared to predecessors using the same lithography technique was much higher than we have seen since with the EUV nodes. Density scaling is the most meaningful comparison metric, but it doesn't take into account additional technology developments.
I was laughing at the expected expectation of universally working UTF-8 just because it's 2026 when I read that. Soooo many things just do not work with UTF-8 as expected. I'm looking at MS Excel with heavy side eye
IEDM is more or less the most prestigious conference on semiconductor devices. Hard to get a more reliable source than a TSCM-affiliated paper from IEDM.
I did find it funny recently when Huawei when talking about its folded logic say the Vertical Bonding Pitch's are every 15,000 angstroms. It is a very fancy way of saying an interconnect every 1.5 microns.
ABSTRACT
A14 NanoFlexTM Pro platform technology features the world’s smallest SRAM with a cell size <0.017μm2 and highest SRAM macro density to date through dimensional ground rule scaling. Coupled with standard cell innovations, it delivers a full-node PPA improvement over the predecessor N2 technology for a 10~15% speed enhancement, a 25~30% power reduction and a chip density increase by ~20% driven by logic and SRAM scaling. Key features, such as TSV, innovative RDL that enables SoIC bond pitch of 4.5μm and high-performance MiM processes, have also been developed to accelerate the system-level integration and scaling for SoIC products. Supported by robust yield and device progress, A14 technology is on track for volume production in 2028.
In simpler terms, the SRAM density improved by 2.9% (according to ChatGPT). Which is better than it sounds, because SRAM had reached a wall, in terms of density gains, and, chips can be dominated by SRAM in terms of surface area, so this can mean a lot more room for logic, even though that is also getting considerably denser.
There's some hope of smaller SRAM in the future - https://raaam-tech.com/technology/ is a three-transistor SRAM.
It's not quite SRAM, it needs to be refreshed like DRAM. That's the main downside compared to SRAM but it's still very interesting.
Yes, the density vs power tradeoff could make a lot of sense in a few applications.
I wonder if it would start to make sense for SRAM caches to shrink (or not grow as fast) in favor of adding on chip DRAM cache at some tier.
Or AMD’s putting sram on a separate chip. I’m surprised they didn’t go there yet except for extra L3 instead of all of it. At some point the costs will shift the decisions.
They claim win + win*10:
This is exactly why Cerebras wafer chips aren’t even on N3. They stayed on N5. It is also why they are now stacking HBM onto the chip.
No one seem to notice that TSMC has kept its timelines inspite if incredibly advance manufacuring,robotics,materials engineering,semi conductor engineering..and many more requirememts.
I think its a miracle.
That’s why TSMC is indispensable for the global economy. No other foundry can produce advanced logic at scale like them.
They are extremely reliable.
Chip density increase is slowing down. Since N10, density scaling has been 60-80%. N3 to N2 is only 20%. And now N2 to A14 is also only 20%.
Is the increase in wafer cost higher than the density increase? If so, that means that the cost per transistor is also going up.
It's hard to tell because AI has pushed up costs. IE. Chip fab margins are increasing.
But generally, I think it's even or increasing $/transistor for each node. I'd guess that A14 would have been 20% more expensive than N2 regardless or AI or not.
It probably is still worth it because you're also getting 20-30% better power efficiency - which is a big deal for data center chips.
If we exclude short-term shortages then no. The cost to make a wafer hasn't really changed. Larger wafers improved costs but that's about it AFAIK.
Feature sizes have been shrinking unevenly for two decades now combined with the overall slowdown in improvements. Transistors themselves are FinFET geometry and something like 15-30 atoms thick and maybe 80-100 across. There ain't much juice left to squeeze in terms of size but perhaps we'll figure out how to reduce leakage (heat).
Physics hates the very large and the very small. The large get the tyranny of volume scaling + general relativity. The small have their entire concept of reality smashed by quantum mechanics.
A lot of that is the lack of SRAM scaling. There’s still quite a bit of improvements in the back end (metal traces). That aside, if foundries adopted say a 1T-1C SRAM we’d see a pretty rapid density doubling
Is 1T1C SRAM a technological thing or does it mean "persuade designers to use DRAM in the many cases where the retention contract could be timeboxed with a bit of extra thought and cross-team haggling"?
MRAM is 1T, non-volatile and supposedly has nanosecond-scale write times so it naively seems like it'd be an ideal SRAM replacement. But I guess shrinking MTJ is more difficult than other components or there are some other limitations.
MRAM is more like 100ns, but yeah Intel actually offers this as part of their 16nm foundry process
Aka eDRAM? It was a thing back on 14nm node, but AFAIR not so much anymore. The 1C part is hard to get right in a way that is compatible with a logic process.
It gets confusing...
eDRAM isn't the same as 1T-SRAM, which isn't quite the same as 1T-1C SRAM...
But overall they run into the same problems that you mention; it's just too hard to get a capacitor in play.
There is Zeno Semi's Bi-SRAM, buuuut it hasn't seemed to catch on for one reason or another.
20% growth then 20% again still seems pretty good to me though. I guess compounded that is a 44% increase N3 to A14 which also starts to look much better if you zoom out a bit. I mean 44% more density since a few years ago seems, if not massive, not insignificant, like you will definitely notice it.
Yes but it takes 8 years to have the same scaling as 2 years before.
Between N2 and A14 should sit A16.
A16 is a half node. It is a derivative of N2 family.
Yes but considering N10 was fabricated with DUV lithography right before the shift to EUV I'm not sure how fair that comparison is. That being said the density scaling of N10 nodes compared to predecessors using the same lithography technique was much higher than we have seen since with the EUV nodes. Density scaling is the most meaningful comparison metric, but it doesn't take into account additional technology developments.
Come on we're in the 21st century, UTF-8 is pervasive. Just call it "Å14" node.
I don't think it's a UTF-8 problem. It's just that most people don't have "Å" on their keyboard.
tips in linux, remap altgr to compose and enjoy glyphs
On mac this is just Opt + A
Most people don’t have “é” on their keyboard, yet they still spell “fiancée”.
Do they? Other than like the new yorker?
They only do if autocorrect allows it
What's □14 node?
I was laughing at the expected expectation of universally working UTF-8 just because it's 2026 when I read that. Soooo many things just do not work with UTF-8 as expected. I'm looking at MS Excel with heavy side eye
"�14" does have a nice touch to it.
TSMC: https://www.tsmc.com/english/dedicatedFoundry/technology/log...
Not sure what this source is, but it looks sketchy.
The source is the IEDM conference website where TSMC will be presenting the paper in Dec 2026
IEDM is more or less the most prestigious conference on semiconductor devices. Hard to get a more reliable source than a TSCM-affiliated paper from IEDM.
Sorry, I got thrown off by the domain.
I can’t believe we’re talking Angstroms already.
I did find it funny recently when Huawei when talking about its folded logic say the Vertical Bonding Pitch's are every 15,000 angstroms. It is a very fancy way of saying an interconnect every 1.5 microns.
They should just say every 7 silicon atoms at that point.
7500 surely? But yeah at this point I feel like the diameter of a silicon atom would make for a better unit of measure.
Oh right i was thinking the feature size (about that many namometers not microns)